Overvoltage-protected light-emitting semiconductor device,...

Details Overvoltage-protected light-emitting semiconductor device,... Overvoltage-protected light-emitting semiconductor device,...

2011-03-01

2011-03-01

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C257SE29032, C438S045000, C438S046000, C438S047000

Reexamination Certificate

active

07897497

ABSTRACT:
A light-generating semiconductor region is grown by epitaxy on a silicon substrate. The light-generating semiconductor region is a lamination of layers of semiconducting nitrides containing a Group III element or elements. The silicon substrate has a p-type impurity-diffused layer formed therein by thermal diffusion of the Group III element or elements from the light-generating semiconductor region as a secondary product of the epitaxial growth of this region on the substrate. The p-type impurity-diffused layer is utilized as a part of overvoltage protector diodes which are serially interconnected with each other and in parallel with the LED section of the device between a pair of electrodes.

REFERENCES:
patent: 2005/0168899 (2005-08-01), Sato et al.

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