Overpressure-protected, polysilicon, capacitive differential pre

Details Overpressure-protected, polysilicon, capacitive differential pre Overpressure-protected, polysilicon, capacitive differential pre

1993-11-12

1994-09-06

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 156662, 156633, 437901, 437919, 437921, H01L 21306, B44C 122

Patent

active

053445236

ABSTRACT:
A capacitive differential pressure sensing device with pressure overrange protection and a method of making the same are described. The device employs a doped polysilicon diaphragm overlying a cavity in a doped single crystal silicon wafer having a port extending into the cavity from the opposite side. The cavity floor serves as an overrange protector.

REFERENCES:
patent: 4332000 (1982-05-01), Peterson
patent: 4420790 (1983-12-01), Golke et al.
patent: 4784721 (1988-11-01), Holmen et al.
patent: 4975390 (1990-12-01), Fujii et al.
patent: 5062302 (1991-11-01), Peterson et al.
patent: 5211058 (1993-05-01), Fukiura et al.
patent: 5225377 (1993-07-01), Hines et al.
patent: 5286341 (1994-02-01), Trah
Chau et al. "Scaling Limits in Batch-Fabricated Silicon Pressure Sensors" IEEE Transctions on Electron Devices 1987, vol. Ed-34, No. 4, pp. 850-858.

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