Optics: measuring and testing – By polarized light examination – Of surface reflection
Reexamination Certificate
2005-09-20
2005-09-20
Pham, Hoa Q. (Department: 2877)
Optics: measuring and testing
By polarized light examination
Of surface reflection
C356S400000, C702S127000, C430S022000
Reexamination Certificate
active
06947141
ABSTRACT:
Overlay measurements for a semiconductor wafer are obtained by forming a periodic grating on the wafer having a first set of ridges and a second set of ridges. The first and second sets of ridges are formed on the wafer using a first mask and a second mask, respectively. After forming the first and second sets of gratings, zero-order cross polarization measurements of a portion of the periodic grating are obtained. Any overlay error between the first and second masks used to form the first and second sets of gratings is determined based on the obtained zero-order cross polarization measurements.
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Bischoff Joerg
Niu Xinhui
Morrison & Foerster / LLP
Pham Hoa Q.
Timbre Technologies, Inc.
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