Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-01-11
2000-07-25
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438401, 438462, 438975, H01L 2176, H01L 2146
Patent
active
060936401
ABSTRACT:
The outer box of a box-in-box alignment pattern can be difficult to see if implemented in damascene technology. The present invention solves this problem by forming its outline from a trench that is substantially deeper than the channel used to contain the damascene wiring. This trench is formed at the same time that first vias are etched so no extra processing steps are needed, only one extra mask. The metal used for the damascene wiring also lines the inside of the trench, resulting in a structure that is easily seen during the alignment step. These outer box trenches may be simple squares or they may be ring shaped (hollow squares). Three different embodiments of the invention are described.
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Hsu Jung-Hsien
Huang Jenn-Ming
Ackerman Stephen B.
Bowers Charles
Nguyen Thanh
Saile George O.
Taiwan Semiconductor Manufacturing Company
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