Overlay mark and method of forming the same

Details Overlay mark and method of forming the same Overlay mark and method of forming the same

2007-07-18

2010-06-15

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

C257S797000

Reexamination Certificate

active

07736844

ABSTRACT:
An overlay mark may include a main overlay pattern and an auxiliary overlay pattern, wherein the main overlay pattern may have an opening exposing a substrate and the auxiliary overlay pattern may be formed in the opening. The auxiliary overlay pattern may be spaced apart from a sidewall of the main overlay pattern defining the opening. The thickness ratio of the auxiliary overlay pattern to the main overlay pattern may be about 0.05:1 to about 0.30:1. Accordingly, overlay accuracy measurements may be improved using the clearer overlay mark according to example embodiments.

REFERENCES:
patent: 6936931 (2005-08-01), Baek et al.
patent: 2000-294490 (2000-10-01), None
patent: 2002-246285 (2002-08-01), None
patent: 1020010005118 (2001-01-01), None
patent: 1020020072044 (2002-09-01), None
patent: 1020040046854 (2004-06-01), None
patent: 1020050110467 (2005-11-01), None

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