Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-29
2009-11-03
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S346000, C257S372000, C257SE21205, C257SE21008, C257S626000, C257SE21640
Reexamination Certificate
active
07612414
ABSTRACT:
A semiconductor structure is provided which includes a first semiconductor device in a first active semiconductor region and a second semiconductor device in a second active semiconductor region. A first dielectric liner overlies the first semiconductor device and a second dielectric liner overlies the second semiconductor device, with the second dielectric liner overlapping the first dielectric liner at an overlap region. The second dielectric liner has a first portion having a first thickness contacting an apex of the second gate conductor and a second portion extending from peripheral edges of the second gate conductor which has a second thickness substantially greater than the first thickness. A first conductive via contacts at least one of the first or second gate conductors and the conductive via extends through the first and second dielectric liners at the overlap region. A second conductive via may contact at least one of a source region or a drain region of the second semiconductor device.
REFERENCES:
patent: 2005/0106844 (2005-05-01), Tung et al.
patent: 2005/0260810 (2005-11-01), Cheng et al.
Chen Xiangdong
Kim Jun Jung
Ko Young Gun
Park Jae-Eun
Yang Haining S.
Cai Yuanmin
International Business Machines - Corporation
Liu Benjamin Tzu-Hung
Neff Daryl K.
Ngo Ngan
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