Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1986-10-29
1988-04-12
Wan, Gene
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330279, H03F 316, H03G 310
Patent
active
047377330
ABSTRACT:
An overdrive control for a GaAs FET power amplifier is provided by a PIN diode attenuator positioned at the input of the FET amplifier where the amount of attenuation is controlled by a control signal derived from the gate current of the following FET amplifier.
REFERENCES:
patent: 4057765 (1977-11-01), Schuermann
patent: 4147991 (1979-04-01), Ijichi et al.
patent: 4320352 (1982-03-01), Rubin et al.
patent: 4420724 (1983-12-01), Owen
patent: 4553105 (1985-11-01), Sasaki
N. LaPrade et al., "Ku-Band SSPA for Communications Satellites," AIAA Proceedings, Mar. 1986, pp. 321-325.
Berard Jr. Clement A.
Meise William H.
RCA Corporation
Troike Robert L.
Wan Gene
LandOfFree
Overdrive control of FET power amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Overdrive control of FET power amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Overdrive control of FET power amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1431862