Semiconductor laser with a quantum well layer including a disord

Details Semiconductor laser with a quantum well layer including a disord Semiconductor laser with a quantum well layer including a disord

1985-07-15

1987-07-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 44, 372 46, H01S 319

Patent

active

046807683

ABSTRACT:
A semiconductor laser includes an active layer (13) for oscillating a laser beam, a first clad layer (12) and a second clad layer (14) stacked to hold the active layer (13), a QW layer (15) stacked on the second clad layer (14) and a diffusion portion (17) formed in the central portion of the QW layer (15) by impurity diffusion. Thickness of the second clad layer (14) is so selected that a beam generated from the active layer (13) can penetrate into the second clad layer (14). The QW layer (15) absorbs the beam generated from the active layer (13), while the diffusion layer (17) in the central portion thereof functions as a non-absorption region with respect to the beam. Thus, implemented is a horizontal optical confinement substantially equivalent to CSP structure.

REFERENCES:
patent: 3978428 (1976-08-01), Burnham et al.
patent: 4033796 (1977-07-01), Burnham et al.
patent: 4594603 (1986-06-01), Holonyak, Jr.
Yonezu et al., "New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization--A Refractive Index Guiding with Zn Doping, Japan J. Appl. Phys., vol. 16, Jan. 1977, No. 1, 209-210.
W. D. Laidig et al, "Disorder of an AlAs-GaAs Superlattice by Impurity Diffusion", Appl. Phys. Lett. 38 (10), 15 May 1981--pp. 776-778.

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