Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2008-05-29
2009-06-16
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S065000, C365S205000, C327S057000
Reexamination Certificate
active
07548445
ABSTRACT:
An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.
REFERENCES:
patent: 5245571 (1993-09-01), Takahashi
patent: 5978252 (1999-11-01), Miwa
patent: 5986919 (1999-11-01), Allen et al.
patent: 6028783 (2000-02-01), Allen et al.
patent: 6049501 (2000-04-01), Pantelakis et al.
patent: 6078529 (2000-06-01), Tada
patent: 6118687 (2000-09-01), Kang
patent: 6278630 (2001-08-01), Yamada
patent: 6310797 (2001-10-01), Muneno
patent: 6356475 (2002-03-01), Tamura et al.
patent: 6563753 (2003-05-01), Rickes et al.
patent: 6590798 (2003-07-01), Komatsuzaki
patent: 6646906 (2003-11-01), Salling
patent: 6801447 (2004-10-01), Murakuki
patent: 6903987 (2005-06-01), Yoon et al.
patent: 7307867 (2007-12-01), Lin et al.
patent: 2002/0176274 (2002-11-01), Ashikaga
patent: 2003/0053326 (2003-03-01), Murakuki
patent: 2003/0095457 (2003-05-01), Jeon et al.
patent: 2003/0128572 (2003-07-01), Ogiwara et al.
patent: 2004/0062107 (2004-04-01), Komatsuzaki
patent: 2004/0095799 (2004-05-01), Jacob et al.
patent: 2004/0095819 (2004-05-01), Joachim et al.
patent: 2004/0114416 (2004-06-01), Noh
patent: 2004/0141353 (2004-07-01), Madan
patent: 2004/0233744 (2004-11-01), Rodriguez et al.
patent: 2005/0033901 (2005-02-01), Igarashi
patent: 06208796 (1994-07-01), None
patent: 11232881 (1999-08-01), None
patent: 2000187990 (2000-07-01), None
patent: 2002074939 (2002-03-01), None
patent: 2002529876 (2002-09-01), None
patent: 2004077441 (2004-09-01), None
patent: WO2004077441 (2004-09-01), None
Lin Chin-Hsi
Weng Chi-Ming
Macronix International Co. Ltd.
Pham Ly D
Thomas Kayden Horstemeyer & Risley
LandOfFree
Over-driven access method and device for ferroelectric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Over-driven access method and device for ferroelectric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Over-driven access method and device for ferroelectric memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4071510