Over-driven access method and device for ferroelectric memory

Details Over-driven access method and device for ferroelectric memory Over-driven access method and device for ferroelectric memory

2008-07-01

2008-07-01

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189150, C365S189110, C365S205000, C327S055000, C327S057000

Reexamination Certificate

active

07394678

ABSTRACT:
An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.

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