Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Parallel controlled paths
Reexamination Certificate
2008-06-17
2008-06-17
Zweizig, Jeffrey S (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Parallel controlled paths
C327S199000
Reexamination Certificate
active
07388417
ABSTRACT:
An output circuit of a semiconductor memory device includes a first data path, a second data path and a third data path. The first data path transfers a sense output signal, and latches the sense output signal to output the sense output signal to a first node. The second data path transfers the sense output signal, and latches the sense output signal to output the sense output signal to the first node. The third data path latches a signal of the first node, and transfers the signal of the first node to generate output data. Accordingly, the semiconductor memory device including the output circuit can operate at a relatively higher frequency using a pseudo-pipeline structured circuit, which combines a wave pipeline structure with a full pipeline structure.
REFERENCES:
patent: 5406134 (1995-04-01), Menut
patent: 6937527 (2005-08-01), Lotz et al.
patent: 2004/0151039 (2004-08-01), Lee et al.
patent: 1999-0086391 (1999-12-01), None
patent: 10-2000-0008508 (2000-02-01), None
patent: 10-2004-0067602 (2004-07-01), None
patent: 10-2004-0107594 (2004-12-01), None
Jang Seong-Jin
Kim Joung-yeal
Kim Kyoung-Ho
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Zweizig Jeffrey S
LandOfFree
Output circuit of a semiconductor memory device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Output circuit of a semiconductor memory device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Output circuit of a semiconductor memory device and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2807433