Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-05-25
1995-07-25
Ng, e,cir
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
327409, 327412, 327542, H01L 2702, H01L 2972
Patent
active
054364876
ABSTRACT:
In an output circuit having first and second MOS transistors in series between a first power supply line and a second power supply line, and a third MOS transistor, the gates of the first and second transistors are connected to first and second input nodes, respectively, and an output node is provided between the first and second MOS transistors. The third MOS transistor is connected between one of the input nodes and the output node. The gate of the third MOS transistor is connected to a third power supply line.
REFERENCES:
patent: 4999518 (1991-03-01), Dhong et al.
NEC Corporation
Ng e,cir
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