Output circuit for integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257371, 257901, 326 34, H01L 27092

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active

061539147

ABSTRACT:
An output circuit for an integrated circuit, includes a first transistor and a second transistor connected in series between a first external voltage and a second external voltage external to the integrated circuit, respectively through first and second electrical connecting paths. The first transistor is for carrying an output line of the integrated circuit to the first external voltage, while the second transistor is for carrying the external line of the integrated circuit to the second external voltage. The second transistor is formed inside a first well of a first conductivity type contained inside a second well of a second conductivity type formed in a substrate of the first conductivity type. The second well of the second conductivity type is connected to the first external voltage through a third electrical connecting path distinct from the first electrical connecting path.

REFERENCES:
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patent: 5519243 (1996-05-01), Kikuda et al.
patent: 5686752 (1997-11-01), Ishimura et al.
patent: 5714796 (1998-02-01), Chishiki
patent: 5838047 (1998-11-01), Yamauchi et al.
patent: 5892263 (1999-05-01), Tachiyama
Syuso Fujii, et al., "45-ns 16-Mbit DRAM with Triple-Well Structure, " IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1, 1989, pp. 1170-1175.

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