Electronic digital logic circuitry – Interface – Supply voltage level shifting
Reexamination Certificate
1999-02-12
2001-05-22
Wamsley, Patrick (Department: 2819)
Electronic digital logic circuitry
Interface
Supply voltage level shifting
C326S057000, C326S083000
Reexamination Certificate
active
06236235
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to an interface for a semiconductor integrated circuit.
In recent years, as the number of semiconductor large-scale integrated circuits (hereinafter, simply referred to as “LSI's”), integrated on a single chip, and the operating speed thereof have been tremendously increased, the power dissipation has also increased noticeably. In order to suppress such increase in power consumption, LSI's are often operated with a reduced power supply voltage. However, it is not always possible to operate all LSI's , included in a single circuit, with an equally reduced power supply voltage. If not, interfacing an LSI operating at a relatively high power supply voltage (e.g., 5 V) with another LSI operating at a relatively low power supply voltage (e.g., 3.3 V) plays an important role in suppressing such unwanted increase in power consumed. Nevertheless, connection of an input/output terminal of an LSI operating at a relatively high voltage like 5 V to that of another LSI operating at a relatively low voltage like 3.3 V causes the following two problems.
First, if the LSI operating at 3.3 V receives a voltage (e.g., 5 V) higher than the power supply voltage thereof (i.e., 3.3 V), then a p-channel MOS transistor, implemented as an output circuit section of an input/output circuit, turns ON. In such a case, current is unintentionally passed from an input/output terminal through the p-channel MOS transistor into a power line inside the LSI. Since the input/output terminal should have high impedance during input operation, such unwanted current supply increases power consumption unnecessarily.
Second, the gate oxide film of an MOS transistor inside the LSI operating at 3.3 V often has a breakdown voltage no higher than the power supply voltage thereof (i.e., 3.3 V). Accordingly, if a high voltage such as 5 V is applied to the film, then dielectric breakdown happens in the MOS transistor, because the applied voltage exceeds the breakdown voltage of the gate oxide film.
Means for solving these problems are disclosed, for example, in U.S. Pat. No. 5,555,149.
Hereinafter, the prior art input/output circuit described in the above-identified patent will be described with reference to the accompanying drawings. It should be noted that the input/output circuit can solve these two problems.
FIG. 3
 illustrates the configuration of the prior art input/output circuit.
As shown in 
FIG. 3
, the input/output circuit includes: an input/output terminal IO; an input terminal IN; an output terminal OUT; an enable terminal EN; an output circuit 
1
; and an input circuit 
2
. The input/output terminal IO is used for exchanging signals with external circuits outside of an LSI. At the input terminal IN, signals are received from other circuits inside the LSI. Conversely, through the output terminal OUT, signals are output to other circuits inside the LSI. And the enable terminal EN is used for switching the output/input states of the input/output terminal IO.
In the output circuit 
1
, if the enable terminal EN is at a high, or “H”, level, a signal, received at the input terminal IN, is output through the input/output terminal IO. Alternatively, if the enable terminal EN is at a low, or “L”, level, the input/output terminal IO comes to have high impedance.
The output circuit 
1
 further includes: p-channel MOS (PMOS) transistors 
11
, 
12
 and 
13
; n-channel MOS (NMOS) transistors 
14
, 
15
, 
16
 and 
17
; an inverter 
18
; a NAND circuit 
19
; a NOR circuit 
20
; a power supply terminal 
21
; and a ground terminal 
22
. The PMOS transistors 
11
 and 
12
 are serially connected between the power supply terminal 
21
 and the input/output terminal IO. The NMOS transistors 
14
 and 
15
 are serially connected between the input/output terminal IO and the ground terminal 
22
.
The output of the NAND circuit 
19
 is supplied to the gate of the PMOS transistor 
11
, to the gate of the PMOS transistor 
12
 through the serially connected NMOS transistors 
17
 and 
16
, and to the gate of the NMOS transistor 
17
 via the inverter 
18
. One of the input terminals of the NAND circuit 
19
 is connected to the enable terminal EN, while the other terminal thereof is connected to the input terminal IN. The input/output terminal IO and the gate of the PMOS transistor 
12
 are connected to each other via the PMOS transistor 
13
. The respective gates of the PMOS and NMOS transistors 
13
, 
14
 and 
16
 are connected to the power supply terminal 
21
.
The output of the NOR circuit 
20
 is supplied to the gate of the NMOS transistor 
15
. One of the input terminals of the NOR circuit 
20
 receives an inverted signal of the signal received at the enable terminal EN, while the other terminal thereof is connected to the input terminal IN.
The input circuit 
2
 receives a signal supplied from the input/output terminal IO and outputs the signal through the output terminal OUT to other circuits inside the LSI.
The operation of the input/output circuit having such a configuration will be described in terms of the operation of outputting a signal, supplied from internal circuits in the output circuit 
1
, through the input/output terminal IO, in particular.
In outputting a signal through the input/output terminal IO, the enable terminal EN should be at “H” level.
First, the operation of outputting an “H” level signal, received at the input terminal IN, through the input/output terminal IO will be described. In this case, the respective outputs of the NAND and NOR circuits 
19
 and 
20
 are both at “L” level. Since the respective gates of the PMOS and NMOS transistors 
13
, 
14
 and 
16
 are connected to the power supply terminal 
21
, an “H” level signal is always supplied to these gates. Accordingly, the PMOS transistor 
13
 turns OFF, while the NMOS transistors 
14
 and 
16
 turn ON. In response to the “L” level signal supplied from the NAND circuit 
19
, the inverter 
18
 outputs an “H” level signal, thereby turning the NMOS transistor 
17
 ON. In this case, the respective gates of the PMOS and NMOS transistors 
11
, 
12
 and 
15
 are all at “L” level. Accordingly, the PMOS transistors 
11
 and 
12
 turn ON, while the NMOS transistor 
15
 turns OFF. As a result, the “H” level signal, supplied from the power supply terminal 
21
, is output through the input/output terminal IO via the PMOS transistors 
11
 and 
12
.
Next, the operation of outputting an “L” level signal, received at the input terminal IN, through the input/output terminal IO will be described. In this case, the respective outputs of the NAND and NOR circuits 
19
 and 
20
 are both at “H” level. Since the respective gates of the PMOS and NMOS transistors 
13
, 
14
 and 
16
 are connected to the power supply terminal 
21
, an “H” level signal is always supplied to these gates. Accordingly, the PMOS transistor 
13
 turns OFF, while the NMOS transistors 
14
 and 
16
 turn ON. In response to the “H”
0
 level signal supplied from the NAND circuit 
19
, the inverter 
18
 outputs an “L” level signal, thereby turning the NMOS transistor 
17
 OFF. In this case, since the “H” level signal is supplied to the gate of the PMOS transistor 
13
 to turn the transistor 
13
 OFF, the gate voltage at the PMOS transistor 
12
 is indefinite. Also, since the respective gates of the PMOS and NMOS transistors 
11
 and 
15
 are both at “H” level, the PMOS transistor 
11
 turns OFF, while the NMOS transistor 
15
 turns ON. Similarly, the NMOS transistor 
14
 has also received the “H” level signal at the gate thereof and is ON. As a result, the “L” level signal, supplied from the ground terminal 
22
, is output through the input/output terminal IO via the NMOS transistors 
15
 and 
14
.
Although the state of the PMOS transistor 
12
 is indefinite, no current flows from the power supply terminal 
21
 to the input/output terminal IO, because the PMOS transistor 
11
, serially connected to this transistor 
12
, is OFF.
Next, the operation of inputting a signal, received at the input/output terminal IO, to other internal circuits insi
Arai Katsuya
Yoshizaki Shoichi
Harness & Dickey & Pierce P.L.C.
Matsushita Electric Industrial Co. Ltd
Tran Anh
Wamsley Patrick
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