Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S356000, C257S363000
Reexamination Certificate
active
07012307
ABSTRACT:
An output buffer with a pull down circuit. The pull down circuit is coupled between a second power line and a pad, and has a resistor, a diode and an electrostatic discharge protection component. The resistor deposited on the substrate of a first conductivity type includes a well region of a second conductivity type. The resistor and the electrostatic discharge protection component are connected in series between the pad and the second power line. The diode is formed in the well region, construct by the PN junction formed between a first doped region of the first conductivity type and the well region. The first doped region is electrically floated in the well regions. During an electrostatic discharge event, the pad is instantaneously connected to the first doped region which will help to boost the turn-on of the electrostatic discharge circuit, and further enhance the electrostatic protection effect.
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Chen Wei-Fan
Lin Shi-Tron
Ladas & Parry LLP
Nadav Ori
Winbond Electronics Corp.
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