Output buffer circuit for interfacing semiconductor integrated c

Electronic digital logic circuitry – Tri-state – With field-effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

326 81, 326 83, H03K 190185

Patent

active

056315791

ABSTRACT:
An output buffer circuit operating normally when its supply potential is exceeded by the potential of the bus to which the buffer circuit output is connected. The circuit comprises a p-channel MOS transistor and a first and a second n-channel MOS transistor. The output node of the output buffer circuit is connected not to the p-channel MOS transistor but to the connection point between the source of the first n-channel MOS transistor and the drain of the second n-channel MOS transistor. The threshold potential of the first n-channel MOS transistor is set so that, with the output node in the high-impedance state, the first n-channel MOS transistor is turned off when the output node potential exceeds the supply potential of the output buffer circuit. This prevents the p-channel MOS transistor from getting activated or from being forward-biased between the back gate and the drain or source. Thus no leak current flows when the bus potential becomes higher than the supply potential of the output buffer circuit.

REFERENCES:
patent: 4384220 (1983-05-01), Segawa et al.
patent: 4578694 (1986-03-01), Ariizumi et al.
patent: 4595845 (1986-06-01), Briggs
patent: 4806798 (1989-02-01), Kanauchi
patent: 4963766 (1990-10-01), Lundberg
patent: 5057715 (1991-10-01), Larsen et al.
patent: 5124585 (1992-06-01), Kim et al.
patent: 5150186 (1992-09-01), Pinney et al.
patent: 5151619 (1992-09-01), Austin et al.
patent: 5311076 (1994-05-01), Park et al.
patent: 5418480 (1995-05-01), Hastie et al.
patent: 5488326 (1996-01-01), Shiraishi et al.
Sedra et al.; "Microelectronic Circuits"; copyright 1987 by Holt, Rinehart and Winston, Inc.; pp. 331 and 344.
Wakerly, John F.; "Digital Design Principles and Practices"; copyright 1989 by John F. Wakerly; pp. 214-217.
"A 200-MH.sub.z 64-b Dual-Issue CMOS Microprocessor", Dobberpuhl et al., IEEE Journal of Solid-State Circuits, vol. 27, No. 11, Nov. 1992, pp. 1555-1567.
Principles of CMOS VLSI Design, Weste et al., pp. 229-230; .COPYRGT.1985 by AT&T Bell Laboratories, Inc. and Kamran Eshraghian.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Output buffer circuit for interfacing semiconductor integrated c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Output buffer circuit for interfacing semiconductor integrated c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Output buffer circuit for interfacing semiconductor integrated c will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1726529

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.