Output buffer and method therefor

Electronic digital logic circuitry – Interface – Current driving

Reexamination Certificate

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Details

C376S249000, C376S249000

Reexamination Certificate

active

06326811

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates generally to output buffers, and specifically to protection of output buffers having low voltage devices.
BACKGROUND OF THE INVENTION
FIG. 1
depicts, in circuit diagram form, a portion of an output buffer
100
known in the prior art. An output pin
102
is connected to a first current electrode of an n-type or n-channel transistor
104
. A control electrode of transistor
104
is coupled to a first voltage supply, labeled OVDD. A second current electrode of transistor
104
is coupled to a first current electrode of an n-type transistor
106
. A control electrode of transistor
106
receives an input signal, labeled DATA. A second current electrode of transistor
104
is coupled to a second voltage supply, labeled GND.
In normal operation, if the signal DATA is asserted, then output buffer
100
pulls the voltage on output pin
102
to the second voltage level (a low voltage level). If the signal DATA is not asserted, then output buffer
100
is placed into a high impedance or tri-state and has no effect on output pin
102
. Another portion of output buffer
100
(not shown) pulls output pin
102
to the first voltage level (a high logic level) or places the second portion into a high impedance state, depending upon the signal DATA.
When output buffer
100
is off or in a high impedance state, transistor
106
is in a non-conducting state. In this case, external devices connected to output buffer
100
may couple a voltage level to output pin
102
that is either (1) greater than OVDD or (2) less than GND. Transistor
104
protects the gate-to-source voltage across transistor
106
in the case an external voltage is applied to output pin
102
that is greater than OVDD. In this case, transistor
104
clamps the voltage present on the first current electrode of transistor
106
to (OVDD−Vt), where Vt is a threshold voltage drop for an n-type transistor. Therefore, the maximum gate-to-source voltage across transistor
106
in the tri-state is (OVDD−Vt−GND) or simply (OVDD−Vt).
When output buffer
100
is active, transistor
106
may be in a non-conducting state (high logic output) or in a conducting state (low logic output). In these two cases, the maximum gate-to-source voltage across transistor
106
is (DATA−GND) or (OVDD−Vt−GND), respectively.
In certain cases, transistor
104
may itself fail. For instance, if an external device couples a voltage level to output pin
102
that is less than GND, then the gate-to-source voltage across transistor
104
will be (OVDD−GND+Vdiode), where Vdiode is the voltage drop across the parasitic diode in transistor
104
. This gate-to-source voltage may exceed the maximum permissible voltage, “V
GSMAX
.” allowed by the process technology in which output buffer
100
is fabricated.
Improvements in semiconductor process technology are constantly reducing the difference between OVDD and GND. Unfortunately, Vdiode is a characteristic of the technology that is not changing. Consequently, the gate-to-source voltage across transistor
104
, (OVDD−GND+Vdiode), is being more and more influenced by Vdiode and less and less influenced by (OVDD−GND) as transistor geometries shrink.
It would be desirable to limit the gate-to-source voltage across transistor
104
, (OVDD−GND+Vdiode) to a level permitted by the process technology in which output buffer
100
is fabricated. Furthermore, it would be desirable to limit the gate-to-source voltage across transistor
104
in a manner which tracks future process developments.


REFERENCES:
patent: 4504747 (1985-03-01), Smith et al.
patent: 5381062 (1995-01-01), Morris
patent: 5764077 (1998-06-01), Andresen et al.
patent: 5917361 (1999-06-01), Wong et al.
patent: 5933025 (1999-08-01), Nance et al.
patent: 6028450 (2000-02-01), Nance
patent: 6078197 (2000-06-01), Kawano

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