OTP antifuse cell and cell array

Static information storage and retrieval – Read/write circuit – Having fuse element

Reexamination Certificate

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C365S205000

Reexamination Certificate

active

07102951

ABSTRACT:
Different embodiments of a one-time-programmable antifuse cell included. In one embodiment, a circuit is provided that includes an antifuse element, a high voltage device, and a sense circuit. The antifuse element has a voltage supply terminal to be at a sense voltage during sensing/reading and a higher programming voltage during programming. The sense circuit is configured to enable programming the antifuse element during programming and to sense the state of the antifuse element during sensing. The high voltage device is coupled between the antifuse element and the sense circuit to couple the antifuse element to the sense circuit during programming and sensing and to protectively shield the sense circuit from the higher programming voltage during programming.

REFERENCES:
patent: 6240033 (2001-05-01), Yang et al.
patent: 6515344 (2003-02-01), Wollesen
patent: 6686791 (2004-02-01), Zheng et al.
patent: 6693481 (2004-02-01), Zheng
patent: 6788607 (2004-09-01), Duval et al.
Keshavarzi, Ali et al., U.S. Appl. No. 10/954,537, entitled “Crosspoint Memory Array Utilizing One Time Programmable Antifuse Cells,” filed Sep. 29, 2004.
Keshavarzi, Ali et al., U.S. Appl. No. 11/027,476, entitled “One Time Programmable Memory,” filed Dec. 28, 2004.
Paillet, Fabrice et al., U.S. Appl. No. 10/956,285, entitled “Non Volatile Data Storage Through Dielectric Breakdown”, filed Sep. 30, 2004.

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