Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2005-02-08
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C257S325000
Reexamination Certificate
active
06853021
ABSTRACT:
An oriented ferroelectric thin-film device includes a substrate, a conductive thin-film disposed on the substrate, and a ferroelectric thin-film disposed on the conductive thin-film, wherein the conductive thin-film comprises a polycrystalline conductive material, the ferroelectric thin-film comprises a Pb-containing perovskite oxide and includes a first ferroelectric sub-layer and a second ferroelectric sub-layer, the first ferroelectric sub-layer is disposed on the conductive thin-film and has a composition changing in the thickness direction, and the second ferroelectric sub-layer is disposed on the first ferroelectric sub-layer and has a constant composition. The ferroelectric thin-film is oriented in a uniaxial direction such that the c-axis is perpendicular to the substrate. A method for manufacturing the oriented ferroelectric thin-film device includes the steps of forming a polycrystalline conductive thin-film on a substrate, and forming a ferroelectric thin-film on the polycrystalline conductive thin-film.
REFERENCES:
patent: 6111284 (2000-08-01), Sakurai
patent: 6288420 (2001-09-01), Zhang et al.
patent: 6396092 (2002-05-01), Takatani et al.
patent: 2001-250424 (2001-09-01), None
patent: 2001-326141 (2001-11-01), None
Minamikawa Tadahiro
Sakurai Atsushi
Dickstein , Shapiro, Morin & Oshinsky, LLP
Eckert George
Murata Manufacturing Co. Ltd.
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