Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1983-09-06
1984-03-27
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156647, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
044392680
ABSTRACT:
A method for determining crystallographic orientation of an InP substrate wafer includes the steps of immersing at least a portion of the substrate wafer in a chemical etchant for a predetermined amount of time to expose features having a predetermined shape and designating a particular crystallographic direction on the substrate wafer in accordance with relative positions of features on the portion of the substrate wafer.
REFERENCES:
Journal of the Electrochemi-al Society: Solid-State Science and Technology, vol. 129(2), "New Dislocation Etchant for InP", by S. N. G. Chu et al., pp. 352-354.
J. Electrochem, Soc.: Solid-State Science and Technology, May 1982, "Chemical Etching of InGaAsP/InP DH Wafer" by S. Adachi et al., pp. 1053-1062.
Journal of Materials Science, vol. 8 (1973), "Chemical Etching of {111} and {100} Surfaces of InP", by B. Tuck et al., pp. 1559-1566.
Journal of Crystal Growth, vol. 58 (1982) "LPE Growth on Structured {100} InP Substrates and Their Fabrication by Preferential Etching", by S. E. H. Turley et al., pp. 409-416.
IEEE Journal of Quantum Electronics, vol. QE-18(1), Jan. 1982, "Chemically Etched-Mirror GaInAsP/InP Lasers-Review", by K. Iga et al., pp. 22-29.
J. Electrochem. Soc.: Solid-State Science and Technology, Jun. 1981, "Chemically Etching Characteristics of (001)InP", by S. Adachi et al., pp. 1342-1349.
IEEE Journal of Quantum Electronics, vol. QE-18(10), Oct. 1982, "Etched Mirror and Groove-Coupled GaInAsP/InP Laser Devices for Integrated Optics", by L. A. Coldren et al., pp. 1679-1688.
Journal of Crystal Growth, vol. 29 (1975), "Revelation Metallographique Des Defauts Cristallins Dans InP", by A. Huber et al., pp. 80-84.
Japanese Journal of Applied Physics, vol. 19(1), Jan. 1980, "Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes _and Integrated Optical Circuits" , by T. Kambaysh et al., pp. 79-85.
IEEE Journal of Quantum Electronics, vol. QE-16(10), Oct., 1980, "GaInAsP/InP DH Lasers with a Chemically Etched Facet", by K. Iga et al., pp. 80-83.
Coldren Larry A.
Stulz Lawrence W.
Bell Telephone Laboratories Incorporated
Powell William A.
Ranieri Gregory C.
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