Orientation-dependent etching of deposited AlN for...

Details Orientation-dependent etching of deposited AlN for... Orientation-dependent etching of deposited AlN for...

2011-06-14

2011-06-14

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C257S418000, C257SE21251

Reexamination Certificate

active

07960200

ABSTRACT:
In accordance with the present invention, accurate and easily controlled sloped walls may be formed using AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.

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