Orientation control of float-zone grown TiC crystals

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

15662072, 15662073, 15662074, 15662075, 156DIG68, 156DIG75, C30B 1300

Patent

active

050697439

ABSTRACT:
A process is provided for the controlled growth of titanium carbide. Essentially, relatively fast, or low temperature growth, favors growth of single crystals having (100) orientation, while relatively slow, or high temperature growth, favors single crystals having (111) orientation. The process obviates the need for any seed crystals and permits growth of rods having diameters exceeding 1 cm.

REFERENCES:
patent: 3194691 (1965-07-01), Dikhoff
patent: 4556448 (1985-12-01), Kim et al.
Solid State Physics (Japan); vol. 10, No. 1 (Jan. 1975).
S. Otani, T. Tanaka and Y. Ishizawa, I. Crystal Growth 83 (1987) P. 481.
S. Otani, T. Tanaka, S. Honma, and Y. Ishizawa, Journal of Crystal Growth; 61 (1981) p. 1.
S. Otani, T. Tanaka and Y. Ishizawa, Journal of Crystal Growth; 66 (1984) p. 419.
"Control of Heat Flow to Feed Rod in Floating Zone System" by S. Otani, et al., Journal of Crystal Growth 87 (1988) pp. 175-179.
"The Crystal Growth of the Transition Metal Compounds TiC, TiN, and ZrN by a Floating Zone Technique" by A. Christensen, Journal of Crystal Growth 33 (1976) pp. 99-104.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Orientation control of float-zone grown TiC crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Orientation control of float-zone grown TiC crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Orientation control of float-zone grown TiC crystals will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1694916

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.