Organometallic precursors for the chemical phase deposition...

Details Organometallic precursors for the chemical phase deposition... Organometallic precursors for the chemical phase deposition...

2007-05-22

2007-05-22

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S681000, C438S475000, C257SE21008, C257S017000, C257S319000

Reexamination Certificate

active

11096860

ABSTRACT:
Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.

REFERENCES:
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patent: 6139700 (2000-10-01), Kang et al.
patent: 6482262 (2002-11-01), Elers et al.
patent: 6498091 (2002-12-01), Chen et al.
patent: 6767582 (2004-07-01), Elers
patent: 7049226 (2006-05-01), Chung et al.

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