Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-14
2010-12-14
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S648000, C438S650000, C438S653000, C438S654000, C257SE21171, C257SE21476
Reexamination Certificate
active
07851360
ABSTRACT:
Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.
REFERENCES:
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 6054398 (2000-04-01), Pramanick
patent: 6136725 (2000-10-01), Loan et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6337148 (2002-01-01), Xu
patent: 6498091 (2002-12-01), Chen et al.
patent: 7074719 (2006-07-01), Kim et al.
patent: 7129161 (2006-10-01), Donohue
patent: 7300869 (2007-11-01), Sun et al.
patent: 7335587 (2008-02-01), Johnston et al.
patent: 2002/0132469 (2002-09-01), Lee et al.
patent: 2003/0180451 (2003-09-01), Kodas et al.
patent: 2005/0009325 (2005-01-01), Chung et al.
patent: 2005/0208754 (2005-09-01), Kostamo et al.
patent: 2006/0141155 (2006-06-01), Gordon et al.
patent: 2006/0223300 (2006-10-01), Simka et al.
patent: 2006/0240187 (2006-10-01), Weidman
patent: 2007/0155158 (2007-07-01), Gstrein et al.
patent: 2007/0264816 (2007-11-01), Lavoie et al.
patent: 2008/0044687 (2008-02-01), Bradley et al.
patent: 2008/0064205 (2008-03-01), Dominguez et al.
patent: 2008/0146042 (2008-06-01), Kostamo et al.
patent: 2008/0223287 (2008-09-01), Lavoie et al.
patent: 2008/0318418 (2008-12-01), Norman
patent: 2009/0053893 (2009-02-01), Khandelwal et al.
patent: 2009/0246931 (2009-10-01), Huotari et al.
IC Knowledge, “Atomic layer deposition (ALD)”, ICKnowledge.com, (2003).
Lapedus, “ALD takes one step forward, one step back”, EE Times Online, http://www.eetimes.com/showArticle.jhtml?articleID=191901291, (Aug. 10, 2006), 3 pages.
The Organometallic Hypertextbook, “Cyclopentadienyl Ligands”, http://www.ilpi.com/organomet/cp.html, (Nov. 20, 2006), 7 pages.
Wikipedia, “Ruthenium”, http://en.wikipedia.org/wiki/Ruthenium, (Nov. 20, 2006), 4 pages.
Wikipedia, “Tantalum nitride barrier layer in copper-based ICs”, Tantalum(III) nitride, http://en.wikipedia.org/wiki/Tantalum(III)—nitride, (Sep. 2, 2006), 4 pages.
Zschech, et al., “Barrier/seed step coverage analysis in via structures for in-laid copper process control”, MRI Montgomery Research, Future Fab International, vol. 14; http://www.future-fab.com/documents.asp?grID=216&d—ID=1673, (Feb. 11, 2003), 13 pages.
Intel Corporation, Office Action mailed 03/34/2009 for U.S. Appl. No. 11/694,677.
Inman, et al., “Evaluation of terakis(diethylamino)hafnium Precursor in the Formation of Hafnium Oxide Films Using Atomic Layer Deposition”, Mat. Res. Soc. Symp. Proc. vol. 765, 2003 Materials Research Society.
Intel Corporation, Final Office Action mailed Sep. 16, 2009; U.S. Appl. No. 11/694,677.
Intel Corporation, Non final Office Action mailed Nov. 24, 2009; U.S. Appl. No. 11/694,677.
Intel Corporation, Non final office action dated Apr. 9, 2010 for U.S. 11/694,677.
Li, et al., “Atomic layer deposition of ultra thin copper metal thin films from a liquid Copper(I) amidinate precursor,”Journal of Electrochemical Society, 153(11), C787-C794 (2006).
Dominguez Juan
Han Joseph
Lavoie Adrien
Peck John
Plombon John
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Landau Matthew C
Snow Colleen E
LandOfFree
Organometallic precursors for seed/barrier processes and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Organometallic precursors for seed/barrier processes and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organometallic precursors for seed/barrier processes and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4235249