Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-04-28
2000-12-12
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438680, 4272551, 4272552, H01L 2144
Patent
active
061598550
ABSTRACT:
Multi-metallic films are prepared from multi-metallic mixtures of metalloamide compounds. The mixtures are subjected to vaporization to form a multi-metallic vapor having defined and controllable stoichiometry. The multi-metallic vapor is then transferred to a chemical vapor deposition chamber, with or without the presence of a reactant gas, to form the multi-metallic film. Multi-metallic nitride, oxide, sulfide, boride, silicide, germanide, phosphide, arsenide, selenide, telluride, etc. films may be prepared by appropriate choice of metalloamide compounds and reactant gas(es).
REFERENCES:
patent: 4895709 (1990-01-01), Laine
patent: 5003092 (1991-03-01), Beachley, Jr.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5178911 (1993-01-01), Gordon et al.
patent: 5192589 (1993-03-01), Sandhu
patent: 5204314 (1993-04-01), Kirlin et al.
patent: 5209979 (1993-05-01), Moehle et al.
patent: 5225561 (1993-07-01), Kirlin et al.
patent: 5280012 (1994-01-01), Kirlin et al.
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 5362328 (1994-11-01), Gardiner et al.
patent: 5389401 (1995-02-01), Gordon
patent: 5399379 (1995-03-01), Sandhu
patent: 5409735 (1995-04-01), Winter et al.
patent: 5453494 (1995-09-01), Kirlin et al.
patent: 5478610 (1995-12-01), Desu et al.
patent: 5514822 (1996-05-01), Scott et al.
patent: 5527567 (1996-06-01), Desu et al.
patent: 5536323 (1996-07-01), Kirlin et al.
patent: 5559260 (1996-09-01), Scott et al.
patent: 5616754 (1997-04-01), Cruse et al.
patent: 5625587 (1997-04-01), Peng et al.
patent: 5637527 (1997-06-01), Baek
patent: 5924012 (1999-07-01), Vaarstra
Hoffmann, Chemical Vapor Deposition of Nitride Thin Films, pp. 1169-1179, 1994.
Billingham and Jenkins, "Polymerization Initiated By Titanium Amides," Applied Polymer Symposia 26:13-18, 1975, no month.
Cathey, "Field Emission Displays," International Symposium on VLSI Technology Systems, and Applications, Proceedings of Technical Papers, May 31-Jun. 2, 1995, Taipei, Taiwan, 1995, pp.131-136.
Feingold and Katz, "Rapid thermal low-pressure metal-organic chemical vapor deposition (RT-LPMOCVD) of semiconductor, dielectric and metal film onto InP and related materials," Materials Science and Engineering R13(2):57-104, 1994, no month.
Fix et al., "Synthesis of Thin Films by Atmospheric Pressure Chemical Vapor Deposition Using Amido and Imido Titanium (IV) Compounds as Precursors," Chemistry of Materials 2(3):235-241, 1990, no month.
Hoffman, David M., "Chemical Vapour Deposition Of Nitride Thin Films," Polyhedron 13(8):1169-1179, 1994, no month.
Ghyka Alexander G.
Micro)n Technology, Inc.
Niebling John F.
LandOfFree
Organometallic compound mixtures in chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Organometallic compound mixtures in chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organometallic compound mixtures in chemical vapor deposition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-216463