Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing
Reexamination Certificate
2006-06-20
2006-06-20
Nazario-Gonzalez, Porfirio (Department: 1621)
Organic compounds -- part of the class 532-570 series
Organic compounds
Heavy metal containing
C427S255280, C427S255310, C427S587000, C427S593000, C438S681000
Reexamination Certificate
active
07064224
ABSTRACT:
This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers.The organometallic precursors are N,N′-alkyl-1,1-alkylsilylamino metal complexes represented by the formula:wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the R1-5can be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.
REFERENCES:
patent: 5314727 (1994-05-01), McCormick et al.
patent: 6753245 (2004-06-01), Choi
patent: 6777565 (2004-08-01), Choi
patent: 2002/0016065 (2002-02-01), Uhlenbrock et al.
patent: 2002/0081381 (2002-06-01), DelaRosa et al.
patent: 2004/0005753 (2004-01-01), Kostamo et al.
patent: WO 2004/046417 (2004-06-01), None
Sharma et al., Applied Organometallic Chemistry, vol. 15, No. 3, pp. 221-226 (2001).
S. Lim Booyang, et al, Atomic Layer Deposition of Transition Metals, Nature Materials,Nature Publishing Group, vol. 2, 749, 2003.
Eiji Fujii, et al, Low-Temperature Preparation and Properties of Spinel-Type . . . , Jpn. J. Appl. Phys. vol. 32, 1993, pp. 1527-1529.
Sergej Pasko, et al, Synthesis and Molecular Structures of Cobalt(II) . . . , Polyhedron 23, 2004, pp. 735-741.
Shou Gu, et al, Chemical Vapor Deposition of Copper-Cobalt Binary Films, Thin Solid Films 340, 1999, pp. 45-52.
Hwa Sung Rhee, et al, Epitaxial Growth of A (100) CoSi2 Layer From Carbonic . . . , Applied Physics Letters, vol. 74, No. 7, pp. 1003-1005.
D.G. Anderson, et al, Chemical Vapor Deposition of Metals and Metal Silicides . . . , Jour. of Organometallic Chem., 437, 1992, pp. C7-C12.
Laurent Brissonneau, et al, MOCVD-Processed Ni Films From Nickelocene . . . , Chem. Vap. Deposition, 1999, 5, No. 4, pp. 135-142.
Penelope A. Lane, et al, Growth of Iron, Nickel, and Permalloy Thin Films by MOCVD . . . , Chem. Vap. Deposition, 1997, 3, No. 2, pp. 97-101.
Eiji Fujii, et al, Preferred Orientations of NiO Films Prepared by Plasma-Enhanced . . . , Jpn. J. Appl. Phys., vol. 35, 1996, pp. L328-L330.
M. Becht, et al, Nickel Thin Films Grown by MOCVD Using Ni(dmg)2 as Precursor, Journal De Physique IV, 5(C5), 1995, pp. C5-465-C5-472.
B. Fraser, et al, Investigation of [(py)(Et)Co(dmg GaEt2)2] and [Ni(dmg GaEt2)2] . . . , Jour. of Organometallic Chem., 472, 1994, pp. 317-328.
Junghun Chae, et al, Atomic Layer Deposition of Nickel by the Reduction of . . . , Electro. and Solid-State Letters, vol. 5, (6) 2002, pp. C64- C66.
Booyong S. Lim, et al, Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transition Metal Amidinates, Inorganic Chem., 2003, vol. 42: 7951.
Booyong S. Lim, et al, Atomic Layer Depositon of Transition Metals, Nature Materials, Nature Publishing Group, Vo. 2, 2003, pp. 749-754.
Wing-Por Leung, et al, Synthesis and Structural Characterisation of Mono- and bi- nuclear Cobalt . . . , J. Chem. Soc., Dalton Trans., 1997, pp. 779-783.
Cuthill Kirk Scott
Lei Xinjian
Thridandam Hareesh
Xiao Manchao
Air Products and Chemicals Inc.
Chase Geoffrey L.
Nazario-Gonzalez Porfirio
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