Organometal-containing acrylate or methacrylate derivatives and

Details Organometal-containing acrylate or methacrylate derivatives and Organometal-containing acrylate or methacrylate derivatives and

1998-09-09

2000-08-15

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

4302861, 525364, G03C 1492

Patent

active

061034487

ABSTRACT:
Organometal-containing acrylate or methacrylate derivatives and photoresists comprising the polymers thereof. Unlike conventional matrix polymers of photoresist, the polymers induce a difference in silicon content between exposed regions and unexposed regions of photoresists by releasing their silicon-containing side chains with the aid of acid in a chemical amplification manner. The difference in silicon content causes the exposed regions to be etched at a different rate from that of the unexposed regions under oxygen plasma. Thus, the photoresist material makes it possible to use a microlithographic process comprising a dry development step which can advantageously prevent the deformation or collapse of patterns which is aggravated as their aspect ratio increases, as well as the photoresist is economically more favorable than a top surface imaging system to which silylation on its top surface or a multi-level resist system to which wet development on its top layer must be applied, because the microlithographic process is very simple and no solvent is released.

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