Organic thin film transistor with low gate overlap...

Details Organic thin film transistor with low gate overlap... Organic thin film transistor with low gate overlap...

2007-10-30

2007-10-30

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S040000, C257S213000, C257S288000, C257SE51005, C438S142000, C438S149000

Reexamination Certificate

active

11230293

ABSTRACT:
Provided are an organic thin film transistor, a flat panel display device and methods of manufacturing these. The organic thin film transistor includes: source and drain electrodes and an organic semiconductor layer formed on a surface of a substrate; a gate electrode insulated from the source and drain electrodes and the organic semiconductor layer; wherein a thickness of at least a portion of the gate insulator above both the source and drain electrodes is larger than a thickness of at least a portion of the gate insulator above the channel region of the organic semiconductor layer.

REFERENCES:
patent: 6433359 (2002-08-01), Kelley et al.
patent: 6661024 (2003-12-01), Zhang et al.
patent: 2004/0012017 (2004-01-01), Nagayama
patent: 2-224275 (1990-09-01), None
patent: 8-78684 (1996-03-01), None
patent: 8-191162 (1996-07-01), None
Office Action issued by the Korean Patent Office on Jun. 30, 2006.

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