Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-01-25
2005-01-25
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S059000, C257S072000, C257S258000, C257S291000, C257S406000
Reexamination Certificate
active
06847048
ABSTRACT:
The present invention relates to an organic thin film transistor (OTFT) comprising: a substrate (1), a gate electrode (2) formed on the substrate (1), a gate insulation layer formed on the gate electrode, a source electrode (5) and a drain electrode (6) formed on the gate insulation layer including a first insulation layer (3) and a second insulation layer (4) with different dielectric constants, and an active layer (7) which overlays the source electrode (5) and the drain electrode (6). Without adding the conventional complicated processes like photolithography but adding two simple processes of spin coating or vaporously coating the second insulation film and self-aligned dry RIE, the present invention not only can improve the carrier's injection property so as to improve the OTFT device's properties, but also can block the leakage current of the gate insulation layer and reduce the device's parasitic capacitance. Therefore, the material with high dielectric constant can be used as the insulation layer to increase the channel capacitance so as to reduce threshold voltage of the device and reduce the adverse effect of the leakage between the source and gate electrodes, the gate and drain electrodes.
REFERENCES:
patent: 20020014624 (2002-02-01), Yamazaki et al.
patent: 1293825 (2001-02-01), None
patent: WO 9940631 (1999-08-01), None
Klauk et al., “A reduced complexity process for organic thin film transistors” (2000) applied physics letters, vol. 76, No. 13, pp. 1692-1694.*
C. D. Dimitrakopoulos, et al., “Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators” (1999) Science Vo. 283, pp. 822-824.
H. Klauk et al., “A Reducted Complexity Process for Organic Thin Film Transistors” (2000) Applied Physics Letters, vol. 76, No. 13, pp. 1692-1694.
Yan Donghang
Yuan Jianfeng
Changchun Institute of Applied Chemistry Chinese Academy of Scie
Tran Minhloan
Tran Tan
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