Semiconductor device manufacturing: process – Making field effect device having pair of active regions...
Reexamination Certificate
2005-08-19
2008-10-21
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
C257SE51001, C438S099000
Reexamination Certificate
active
07439103
ABSTRACT:
An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.
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The Search Report dated May 4, 2006 for corresponding Korean Patent Application No. 10-2004-0101030.
Self-Organized Organic Thin-Film Transistor for Flexible Active-Matrix Display, by Sung Hwan Kim, Hye Young Choi, Seung Hoon Han, Ji Ho Hur and Jin Jang, Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea, pp. 1294-1297.
Choi Nack Bong
Nam Dae Hyun
Seo Hyun Sik
Brinks Hofer Gilson & Lione
Ford Kenisha V
LG Display Co. Ltd.
Lindsay Jr. Walter L.
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