Organic thin film transistor comprising device insulation...

Details Organic thin film transistor comprising device insulation... Organic thin film transistor comprising device insulation...

2005-12-29

2009-11-03

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S040000, C257SE51005, C438S099000, C438S158000

Reexamination Certificate

active

07612409

ABSTRACT:
An organic thin film transistor (OTFT) includes a substrate, a gate electrode formed on the transparent substrate, a gate insulation film formed on the gate electrode, a source electrode and a drain electrode formed spaced apart from each other on the gate insulation film, a device insulation film formed over the gate, source, and drain electrodes, and an organic semiconductor film formed on the device insulation film.

REFERENCES:
patent: 4599241 (1986-07-01), Nakaboh et al.
patent: 5287208 (1994-02-01), Shimoto et al.
patent: 6133051 (2000-10-01), Hintermaier et al.
patent: 6217793 (2001-04-01), Totani et al.
patent: 6458416 (2002-10-01), Derderian et al.
patent: 6650387 (2003-11-01), Asao et al.
patent: 2004/0161873 (2004-08-01), Dimitrakopoulos et al.
patent: 2005/0057136 (2005-03-01), Moriya et al.
patent: 2005/0156161 (2005-07-01), Hanna et al.
patent: 2004-0067047 (2004-07-01), None
patent: 1020040067047 (2004-07-01), None

Affiliated with

Also associated with

Rating

Organic thin film transistor comprising device insulation... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Organic thin film transistor comprising device insulation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organic thin film transistor comprising device insulation... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4124846