Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-05-31
2011-05-31
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51006
Reexamination Certificate
active
07952091
ABSTRACT:
Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.
REFERENCES:
patent: 7459337 (2008-12-01), Kang et al.
Jang Seon-Pil
Noh Jung-Hun
Shin Jung-Han
Shin Seong-sik
Yoon Min-Ho
H.C. Park & Associates PLC
Hoang Quoc D
Samsung Electronics Co,. Ltd.
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