Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2011-08-16
2011-08-16
Rossoshek, Helen (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S050000, C716S051000, C716S053000, C716S054000, C257S040000, C257S059000, C438S030000, C438S099000
Reexamination Certificate
active
08001491
ABSTRACT:
A method of fabricating an organic thin film transistor is provided. The method includes forming a source, a drain and a gate on a substrate and forming a dielectric layer to isolate the gate from the source and isolate the gate from the drain. An organic active material layer is formed on the substrate to fill a channel region between the source and the drain and cover the source and the drain. A barrier material layer is formed on the organic active material layer. Thereafter, the barrier material layer and the organic active material layer are patterned to form a barrier layer and an organic active layer and expose the source and the drain.
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Hu Tarng-Shiang
Kao Chi-Jen
Peng Yu-Rung
Wang Yi-Kai
Yang Tsung-Hua
Industrial Technology Research Institute
Jianq Chyun IP Office
Rossoshek Helen
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