Organic thin-film switching memory device and memory device

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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C365S175000, C365S154000

Reexamination Certificate

active

06947321

ABSTRACT:
An organic switching memory device includes a plurality of first electrode lines; an organic memory layer formed on the plurality of first electrode lines, the organic memory layer having a voltage-current hysteresis characteristic; a semiconductor diode layer stacked on the organic memory layer; and a plurality of second electrode lines formed on the semiconductor diode layer, the plurality of second electrode lines being disposed in a direction so as to intersect the plurality of first electrode lines.

REFERENCES:
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6646912 (2003-11-01), Hurst et al.
patent: 6683322 (2004-01-01), Jackson et al.
patent: 8-116109 (1996-05-01), None
patent: 2001-516964 (2001-10-01), None

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