Organic silica-based film, method of forming the same,...

Details Organic silica-based film, method of forming the same,... Organic silica-based film, method of forming the same,...

2008-07-15

2008-07-15

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S790000, C257SE21261

Reexamination Certificate

active

11176622

ABSTRACT:
A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3, (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi—(R10)d—Si(OR8)3-cR9c.

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