Organic-polymer memory element

Details Organic-polymer memory element Organic-polymer memory element

2006-04-25

2006-04-25

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S151000, C365S129000, C257S040000, C257S642000, C257S759000, C438S099000, C438S623000, C438S725000

Reexamination Certificate

active

07035140

ABSTRACT:
Embodiments of organic-polymer-based memory elements that are stable to repeated READ access operations are disclosed. Organic-polymer-based memory elements can suffer cumulative degradation that occurs over repeated READ access operations due to the introduction of electrons into the organic-polymer layer. In general, entry of electrons into the organic-polymer layer generally lags initiation of a hole current within the organic-polymer layer following application of a voltage potential across the memory elements. Therefore, stable memory elements can be fabricated by introducing electron-blocking layers and/or limiting the duration of applied voltages during READ access operations.

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patent: WO01/27972 (2001-04-01), None

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