Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-10-24
2009-12-08
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51008
Reexamination Certificate
active
07629607
ABSTRACT:
Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.
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patent: 2005/0058009 (2005-03-01), Yang et al.
patent: 2005/0211978 (2005-09-01), Bu et al.
patent: 2006/0141703 (2006-06-01), Kang et al.
Chan Yi-Jen
Chen Jun-Rong
Fan Jui-Fen
Hwang Gue-Wuu
Lin Heng-Tien
Dickey Thomas L
Industrial Technology Research Institute
Thomas Kayden Horstemeyer & Risley
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