Organic memory devices and methods of fabricating such devices

Details Organic memory devices and methods of fabricating such devices Organic memory devices and methods of fabricating such devices

2006-11-20

2010-11-09

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE51050, C257SE51051

Reexamination Certificate

active

07829885

ABSTRACT:
Disclosed herein are organic memory devices and methods for fabricating such devices. The organic memory devices comprise a first electrode, a second electrode and an organic active layer extending between the first and second electrodes wherein the organic active layer is formed from one or more electrically conductive organic materials that contain heteroatoms and which are configured in such a manner as that the heteroatoms are available for linking or complexing metal atoms within the organic active layer. The metal ions may then be reduced to form metal filaments within the organic active layer to form a low resistance state and the metal filaments may, in turn, be oxidized to form a high resistance state and thereby function as memory devices.

REFERENCES:
patent: 6977389 (2005-12-01), Tripsas et al.
patent: 2002/0163057 (2002-11-01), Bulovic et al.
patent: 2003/0148142 (2003-08-01), Fryd et al.
patent: 2003/0226996 (2003-12-01), Aramaki et al.
patent: 2004/0027849 (2004-02-01), Yang et al.
patent: 2004/0051096 (2004-03-01), Kingsborough et al.
patent: 2004/0159835 (2004-08-01), Krieger et al.
patent: 2004/0197600 (2004-10-01), Thompson et al.
patent: 2004/0224182 (2004-11-01), Lazarev
patent: 2005/0006643 (2005-01-01), Lan et al.
patent: 2005/0045877 (2005-03-01), Lyons et al.
patent: 2005/0196637 (2005-09-01), Herron
patent: 62-95882 (1987-05-01), None
patent: 62-095882 (1987-05-01), None
Y. Segui et al., “Switching in Polystyrene Films: Transition From On To Off State” J. Appl. Phys., vol. 47, No. 1, Jan. 1, 2976.
L. Ma et al., “Organic Nonvolatile Memory by Controling the Dynamic Copper-Ion Concentration Within Organic Layer” Applied Physics Letters, vol. 84, No. 24, Jun. 14, 2004.

Affiliated with

Also associated with

Rating

Organic memory devices and methods of fabricating such devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Organic memory devices and methods of fabricating such devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organic memory devices and methods of fabricating such devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4169674