Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-12-01
2010-10-19
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51031, C257SE51041, C438S099000
Reexamination Certificate
active
07816670
ABSTRACT:
An organic memory device and a method for fabricating the memory device are provided. The organic memory device may include a first electrode, a second electrode, and an ion transfer layer between the first electrode and the second electrode. The organic memory device may have lower operating voltage and current, and may be fabricated at lower costs.
REFERENCES:
patent: 5883397 (1999-03-01), Isoda et al.
patent: 7199394 (2007-04-01), Mandell et al.
patent: 7221599 (2007-05-01), Gaun et al.
patent: 7307338 (2007-12-01), Mandell et al.
patent: 7405167 (2008-07-01), Kang et al.
patent: 2002/0163057 (2002-11-01), Bulovic et al.
patent: 2004/0027849 (2004-02-01), Yang et al.
patent: 2006/0245235 (2006-11-01), Krieger et al.
patent: 2007/0176172 (2007-08-01), Joo et al.
patent: 2007/0176189 (2007-08-01), Joo et al.
patent: 62-095882 (1987-05-01), None
Y. Segui et al., “Switching In Polystyrene Films: Transition From On To Off State” J. APPL. PHYS., vol. 47, No. 1, Jan. 1976.
Choi Tae Lim
Joo Won Jae
Lee Sang Kyun
Dang Trung
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
LandOfFree
Organic memory device and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Organic memory device and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organic memory device and fabrication method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4166036