Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1998-02-27
2000-07-04
Pianalto, Bernard
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
42725537, 4273977, 427574, 427579, 427598, H05H 120
Patent
active
060835729
ABSTRACT:
A method of forming a low-dielectric constant film on a substrate. The method includes placing the substrate within a plasma processing chamber. Gas within the chamber is removed. A combination of hydrocarbon and hydrofluorocarbon gasses are flowed into the chamber. A high density plasma is created in the chamber. The high density plasma is extinguished. Finally, all gas is removed from the chamber. The method can additionally include a heating step after the film has been formed.
REFERENCES:
Koji Miyata, Masaru Hori, and Toshio Goto, Dept. of Quantum Engrg., Nagoya Univ., Furo-cho, Chikusa-Ku, Nagoya 464-01, Japan; Infrared Diode Laser Absorption Spectroscopy Measurements of CFx (X=1-3) Radical Densities in Electron Cyclotron Resonance Plasmas Employing C4F8, C2F6, CF4, and CHF3 Gases; J.Vac. Sci. Technol. A 14(4), Jul./Aug. 1996; 1996 American Vacuum Society, pp. 2343-2350.
Stuardo Robles, Loreto Vasquez, Moshe Eizenberg, and Farhad Moghadam, Applied Materials, Inc., Santa Clara, California 95054, USA; "Characterization of High Density Plasma Chemical Vapor Deposited a-Carbon and a-Fluorinated Carbon Films for Ulta Low Dielectric Applications"; Feb. 10-11, 1997 DUMIC Conference, 1997 ISMIC-222D/97/0026; pp. 26-33, (No month available).
Mertz Francoise F.
Ray Gary W.
Seaward Karen L.
Theil Jeremy A.
Hewlett--Packard Company
Pianalto Bernard
Short Brian R.
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