Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2011-08-09
2011-08-09
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257SE33044, C314S025000
Reexamination Certificate
active
07994522
ABSTRACT:
The present invention relates to an organic light emitting element and an organic light emitting device including the same. An impurity layer close to an electrode is doped with a small amount, and an impurity layer for a p-n junction is doped with a large amount, such that a high current may flow under a low voltage.
REFERENCES:
patent: 2008/0278066 (2008-11-01), Spindler et al.
Chu Chang-Woong
Ha Jae-Kook
Lee Joo-Hyeon
H.C. Park & Associates PLC
Pham Hoai v
Samsung Electronics Co,. Ltd.
Ullah Elias
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