Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-03-29
2011-03-29
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE51018, C257SE51019, C257SE51022, C438S158000
Reexamination Certificate
active
07915613
ABSTRACT:
Disclosed is an organic light emitting display device including a substrate having a plurality of sub-pixel areas, a switching thin film transistor formed on each of the sub-pixel areas, a driving thin film transistor connected to the switching thin film transistor, a color filter formed on at least one of sub-pixel areas, an insulating layer formed on the switching thin film transistor, the driving thin film transistor and the color filter, a pixel electrode connected to the driving thin film transistor, an organic light emitting member formed on the pixel electrode, and a common electrode formed on the organic light emitting member. The insulating layer has a groove. The groove is formed along a boundary of the pixel electrode. The groove has a width of about 0.2 to about 4 μm. The groove has a depth of about 0.2 to about 4 μm. The pixel electrode has an edge declined in the groove.
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H.C. Park & Associates PLC
Ligai Maria
Pham Thanh V
Samsung Electronics Co,. Ltd.
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