Organic light-emitting display device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S040000, C257S082000, C257SE33076

Reexamination Certificate

active

07872288

ABSTRACT:
An organic light-emitting display device includes a substrate, a first buffer layer and a second buffer layer on the substrate, a thin film transistor on the second buffer layer, an organic light-emitting diode electrically connected with the thin film transistor, and a photo sensor with an intrinsic region on the second buffer layer, wherein the photo sensor is capable of absorbing red light from the organic light-emitting diode and of exhibiting quantum efficiency of from about 50% to about 90%.

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Zimmermann, H.; Muller, B.; Hammer, A.; Herzog, K.; Seegebrecht, P.; “Large-area lateral p-i-n photodiode on SOI,” Electron Devices, IEEE Transactions on , vol. 49, No. 2, pp. 334-336, Feb 2002.

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