Organic insulator composition including a hydroxyl...

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – Ethylenically unsaturated reactant admixed with either...

Reexamination Certificate

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C257S040000, C257SE51001

Reexamination Certificate

active

08003729

ABSTRACT:
An organic insulator composition including a crosslinking agent and a hydroxyl group-containing oligomer or hydroxyl group-containing polymer is provided. A dielectric film and an organic thin film transistor (OTFT) using an organic insulator composition are also provided. A dielectric film may include a compound having hydroxyl group-containing oligomers or hydroxyl group-containing polymers linked by crosslinking using a crosslinking agent having at least two vinyl ether groups. An organic thin film transistor may include a gate electrode on a substrate, a gate insulating layer on the gate electrode, source and drain electrodes on the gate insulating layer and an organic semiconductor layer contacting the gate insulating layer, wherein the gate insulating layer includes an dielectric film as described above.

REFERENCES:
patent: 2005/0279995 (2005-12-01), Shin et al.
patent: 2008/0067505 (2008-03-01), Lee et al.
patent: 2009/0092814 (2009-04-01), Kunitake et al.
patent: WO 01/33649 (2001-05-01), None
Yamaoka et al, “Novel Polymeric Resists Based on Vinyl Ether Functionality,” Journal of Photopolymer Science and Technology, vol. 9, No. 4 (1996), pp. 723-728.
Lee et al, “Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator,” Applied Physics Letters, 88, 252102 (2006).
European Office Action dated Sep. 3, 2010 in corresponding European Application No. 08155916.3.

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