Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-09-10
1998-12-29
Chaudhari, Chandra
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438782, 257 40, H01L 2131
Patent
active
058541390
ABSTRACT:
A field-effect transistor using a conjugated oligomer having an ionization potential of 4.8 eV or above in the semiconductor layer thereof works stably and has a long life-time and can be used in a liquid crystal display device as a switching element to give excellent contrast and good performances.
REFERENCES:
patent: 5017975 (1991-05-01), Ogawa
patent: 5563424 (1996-10-01), Yang et al.
Aratani Sukekazu
Kondo Katsumi
Ohara Shuichi
Berry Renee R.
Chaudhari Chandra
Hitachi , Ltd.
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