Organic field effect transistor and method of manufacturing...

Details Organic field effect transistor and method of manufacturing... Organic field effect transistor and method of manufacturing...

2011-06-07

2011-06-07

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21561

Reexamination Certificate

active

07955915

ABSTRACT:
The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio.

REFERENCES:
patent: 4404731 (1983-09-01), Poleshuk
patent: 4461031 (1984-07-01), Blamer

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