Organic aluminum precursor and method of manufacturing a...

Details Organic aluminum precursor and method of manufacturing a... Organic aluminum precursor and method of manufacturing a...

2006-09-21

2008-11-18

Meeks, Timothy (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

C427S255290, C427S255310, C427S255280, C427S230000, C427S569000, C427S250000, C427S249500, C427S255320, C427S255600

Reexamination Certificate

active

07452569

ABSTRACT:
In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae:wherein R1, R2, R3, R4and R5are independently H or a C1-C5alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, orwherein R1, R2, R3, R4R5, R6, R7and R8are independently H or a C1-C5alkyl functional group, and Y is boron.

REFERENCES:
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patent: 2004/0026786 (2004-02-01), Leu et al.
patent: 2006/0257567 (2006-11-01), Peters et al.
patent: 2000-086673 (2000-03-01), None
patent: 100246155 (1999-12-01), None
patent: 100292687 (2001-03-01), None
Glass et al, Chemical Vapor Deposition Precursor Chemistry. Formation of Pure Aluminum, Alumina, and Aluminum Boride Thin Films from Boron-Containing Precursor Compounds by Chemical Vapor Deposition, Chemistry of Materials, 4, 530-538.

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