Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-03-07
1998-05-05
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 9, 257 12, 257 14, H01L 2906, H01L 310328, H01L 310336, H01L 31072
Patent
active
057478279
ABSTRACT:
An optoelectronic semiconductor device is provided in which carrier transport towards the active region thereof is enhanced by the formation of a miniband within a superlattice region of the device having a repeating pattern of first and second semiconductor regions. The minimum energy level of the miniband is equal to or greater than the energy level of a guiding region between the active region and the superlattice region.
REFERENCES:
patent: 4620206 (1986-10-01), Ohta et al.
patent: 4862471 (1989-08-01), Pankove
patent: 4866488 (1989-09-01), Frensley
patent: 5027164 (1991-06-01), Awano
patent: 5040186 (1991-08-01), Logan et al.
patent: 5324959 (1994-06-01), Nakamura et al.
European Search Report for Application EP 96301594.6, mail Nov. 29, 1996.
Ikuo Suemune, J. Appl. Phys. 67(5), 1 Mar. 1990, "Doping in a Superlattice Structure: Improved Hole Activation in wide-gap II-VI Materials", pp. 2364-2370.
H. Okuyama et al., Electronics Letters, 10th Sep. 1992, vol. 28, No. 19, "ZnSe/ZnMgSSe Blue Laser Diode", pp. 1798-1799.
Suemune, J. Appl. Phys. 67(5), 1 Mar. 1990, American Inst. of Physics, pp. 2364-2369, "Doping in a Superlattice . . . ".
Okuyama et al, Journal of Crystal Growth 117(1992) 139-143, "Epitaxial Growth of ZnMgSSe on GaAs Substrate by . . . ".
Okuyama et al, Appl. Phys. Lett. 64(7), 14 Feb. 1994, pp. 904-906, "Epitaxial Growth of p-Type ZnMgSSe".
Fan et al, Appl. Phys. Lett. 61(26), 28 Dec. 1992, pp. 3160-3162, "Graded Band Gap Ohmic Contact to p-ZnSe".
Hiei et al, Electronics Letters, 13 May 1993, vol. 29, No. 10, pp. 878-879, "Ohmic Contacts to P-Type ZnSe Using . . . ".
Ishibashi et al. 7th Ann. Mtg., IEEE, "One Hour Long Room Temp. CW Operation ZnMgSSe Based Blue-Green . . . ".
Haase et al, Appl. Phys. Lett. 59(11) 9 Sep. 1991, pp. 1272-1274, "Blue-Green Laser Diodes".
Itoh et al, Elec. Letters, 29 Apr. 1993, vol. 29, No. 9, pp. 766-768, "Room Temp. Pulsed Operation of 498nm Laser . . . ".
Nakayama et al, Elec. Lett., 9 Dec. 1993, vol. 29, No. 25, pp. 2194-2195, "Continuous Wave Operation of 489.9 nm Blue . . . ".
Nakayama et al, Elec. Lett. 5 Aug. 1993, vol. 29, No. 16, pp. 1488-1489, "Room Temp. Continuous Operation of Blue . . . ".
Duggan Geoffrey
Rorison Judy Megan
Teraguchi Nobuaki
Tomomura Yoshitaka
Crane Sara W.
Sharp Kabushiki Kaisha
Wille Douglas A.
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