Coherent light generators – Particular active media – Semiconductor
Patent
1991-01-16
1992-10-20
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 45, 372 47, H01S 319
Patent
active
051576791
ABSTRACT:
An optielectronic device comprising a substrate crystal whose crystal plane is a (n11) plane tilted from the (100) plane toward the [110] direction, or [110] direction where (n>1). When the substrate is applied to an AlGaInP semiconductor laser, the optical device can be cleaved into a rectangular shape, as in the case of a (100) substrate crystal, resulting in easy handling of the chips and also is effective for making the lasting wavelength shorter, lowering the threshold current density for lasing, improving the continuous lasing temperature, etc. Furthermore, semiconductor lasers of different lasing wavelengths can be prepared under good control. Furthermore, a doping efficiency having no dependence on a tilt angle can be obtained by proper selection of a dopant. For example, Si is suitable as an n-type dopant entering sites of group III atom on an (n11) A plane (n.gtoreq.2).
REFERENCES:
patent: 4974231 (1990-11-01), Gomyo
patent: 5016252 (1991-05-01), Hamada et al.
Minagawa et al., "Room Temp. CW Operation of Short Wavelength GaInP/AlGuInP Laser Grown on (511) A GaAs Substrate by MVPE," Electronics Letters, Jul. 6, 1989, vol. 25, No. 14, pp. 925-926.
Andre, et al., "Extended Abstracts of the 20th Conference on Solid State Devices and Material", 1988 pp. 387-390.
Andre, et al., Journal of Crystal Growth, pp. 354-359, 1986.
Kajimura Takashi
Kawano Toshihiro
Kondow Masahiko
Minagawa Shigekazu
Satoh Shin
Epps Georgia Y.
Hitachi,Ltd.
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