Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-06-03
2008-06-03
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S428000, C257S431000, C257SE27122, C438S048000, C438S054000, C438S069000
Reexamination Certificate
active
07382034
ABSTRACT:
The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive structure formed on the substrate.
REFERENCES:
patent: 4788582 (1988-11-01), Yamamoto et al.
patent: 5936261 (1999-08-01), Ma et al.
patent: 6018187 (2000-01-01), Theil et al.
patent: 6670599 (2003-12-01), Wagner et al.
International Search Report from corresponding International Application No. PCT/EP02/05336, filed May 15, 2002.
Rieve, P. et al.,a-Si:H Color Imagers and Colorimetry, Journal of Non-Crystalline Solids 266-269 (2000) pp. 1168-1172.
Theil, Jeremy A., et al.,Hydrogenated Amorphous Silicon Photodiode Technology for Advanced CMOS Avtive Pixel Sensor Imagers, Mat. Res. Soc. Symp. Proc. Vol. 609 © 2000 Materials Research Society, pp. A14.3.1-A14.3.6.
Schneider, Bernd et al.,Image Sensors in TFA(thin Film on ASIC)Technology, Handbook of Computer Vision and Applications, vol. 1, Sensors an Imaging, copyright 1999, pp. 237-270.
Lulé Tarek
Prima Jens
Rieve Peter
Ronneberger Reinhard
Scholz Markus
Jorgenson Lisa K.
Morris James H.
Sefer A.
STMicroelectronics NV
Wilson Scott R
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